Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority of theprior Japanese Patent Application No. 2013-086099, filed on Apr. 16,2013, the entire contents of which are incorporated herein by reference.

FIELD

The embodiments discussed herein are directed to a semiconductor deviceand a method of manufacturing the same.

BACKGROUND

Compound semiconductor devices, in particular, nitride semiconductordevices are actively developed as high-withstand-voltage and high-powersemiconductor devices by utilizing their characteristics such as a highsaturation electron velocity and a wide band gap. Many reports have beenmade on field-effect transistors, in particular, HEMTs (High ElectronMobility Transistors) as the nitride semiconductor devices. Inparticular, an AlGaN/GaN HEMT using GaN as an electron transit layer andusing AlGaN as an electron supply layer has been drawing attention. Inthe AlGaN/GaN HEMT, a distortion resulting from a difference in latticeconstant between GaN and AlGaN occurs in AlGaN. Owing to piezoelectricpolarization caused by the distortion and spontaneous polarization ofAlGaN, high-concentration two-dimensional electron gas (2DEG) isobtained. Therefore, a high-withstand-voltage and high-power can berealized.

In recent years, HEMTs have excellent high-speed characteristics and arethus applied to signal processing circuits of optical communicationsystems, other high-speed digital circuits and so on. The HEMTs haveexcellent low-noise characteristics and are thus expected to be appliedto amplifiers in a microwave or millimeter-wave band.

On the other hand, to improve the high-frequency characteristics of theHEMTs, it is necessary to increase the value of a cutoff frequency(amplification limit frequency) f_(T) of current gain that is the upperlimit of the frequency of the amplification relating to the current gainof a transistor. For the increase, it is necessary to increase the valueof a mutual conductance gm that is an element parameter relating to theamplification factor of an element and to decrease the capacitancebetween a gate electrode and a source electrode by reducing the gatelength.

It is particularly necessary to decrease the parasitic capacitance dueto an interlayer insulating film (protective film) around a gateelectrode so as to prevent the high-frequency characteristics fromworsening even when the HEMTs are integrated (into a MMIC, forinstance). To decrease the parasitic capacitance, it is effective toreduce the dielectric constant of the interlayer insulating film and toremove the interlayer insulating film around the gate electrode.

For example, in Patent Documents 1 to 4, the interlayer insulating filmaround the gate electrode is removed as follows.

First, a filled material layer is formed around the gate electrode, andthen an interlayer insulating film is formed so as to cover the entiresurface. Next, connection holes are formed in the interlayer insulatingfilm so as to expose end portions of the filled material layer. Then,the filled material layer is dissolved and removed through theconnection holes. Thus, the interlayer insulating film is formed so thata cavity is formed around the gate electrode.

Patent Document 1: Japanese Laid-open Patent Publication No. 2004-95637

Patent Document 2: Japanese Laid-open Patent Publication No. 2006-210499

Patent Document 3: Japanese Laid-open Patent Publication No. 5-335343

Patent Document 4: Japanese Laid-open Patent Publication No. 2009-272433

By the methods of Patent Documents 1 to 4, however, the interlayerinsulating film around the gate electrode can be made into the cavitybut the interlayer insulating film remains above the source electrodeand the drain electrode, so that complete decrease of the parasiticcapacitance cannot be achieved. This is because if the filled materialis formed also on the source electrode and the drain electrode and thendissolved and removed, a part that supports the interlayer insulatingfilm is lost and the remaining interlayer insulating film fails onto theelectrodes.

As described above, in the prior art, it is difficult to make theinterlayer insulating film into the cavity at a maximum to decrease asmuch as possible the parasitic capacitance, bringing about a problem ofinhibiting the improvement in maximum operating frequency.

SUMMARY

According to an aspect of the embodiment, a semiconductor deviceincludes: a first electrode; a second electrode; an interlayerinsulating film formed above the first electrode and the secondelectrode; and connection parts electrically connected to the firstelectrode and the second electrode respectively, wherein a cavity isformed between the interlayer insulating film and a surface of the firstelectrode, a surface of the second electrode, and parts of surfaces ofthe connection parts.

According to an aspect of the embodiment, a method of manufacturing asemiconductor device includes: forming a first electrode; forming asecond electrode; covering the first electrode and the second electrodewith a filled material; forming an interlayer insulating film coveringthe filled material; forming connection parts which penetrate the filledmaterial and the interlayer insulating film and are electricallyconnected to the first electrode and the second electrode; and removingthe filled material to form a cavity between the interlayer insulatingfilm and a surface of the first electrode, a surface of the secondelectrode, and parts of surfaces of the connection parts.

The object and advantages of the invention will be realized and attainedby means of the elements and combinations particularly pointed out inthe claims.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and arenot restrictive of the invention.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1A to FIG. 1C are schematic sectional views illustrating a methodof manufacturing an AlGaN/GaN HEMT according to a first embodiment inorder of steps;

FIG. 2A to FIG. 2C are schematic sectional views illustrating the methodof manufacturing the AlGaN/GaN HEMT according to the first embodiment inorder of steps subsequent to FIG. 1C;

FIG. 3A to FIG. 3C are schematic sectional views illustrating the methodof manufacturing the AlGaN/GaN HEMT according to the first embodiment inorder of steps subsequent to FIG. 2C;

FIG. 4A and FIG. 4B are schematic sectional views illustrating themethod of manufacturing the AlGaN/GaN HEMT according to the firstembodiment in order of steps subsequent to FIG. 3C;

FIG. 5 is a characteristic chart representing a relation between themaximum operating frequency (GHz) and the gate length (μm) regarding theAlGaN/GaN HEMT according to the first embodiment and its comparativeexamples;

FIG. 6A to FIG. 6C are schematic sectional views illustrating main stepsof a method of manufacturing an AlGaN/GaN HEMT according to a modifiedexample of the first embodiment in order;

FIG. 7A to FIG. 7C are schematic sectional views illustrating main stepsof the method of manufacturing the AlGaN/GaN HEMT according to themodified example of the first embodiment in order subsequent to FIG. 6C;

FIG. 8A to FIG. 8C are schematic sectional views illustrating a methodof manufacturing a MOS transistor according to a second embodiment inorder of steps;

FIG. 9A to FIG. 9C are schematic sectional views illustrating the methodof manufacturing the MOS transistor according to the second embodimentin order of steps subsequent to FIG. 8C;

FIG. 10A and FIG. 10B are schematic sectional views illustrating themethod of manufacturing the MOS transistor according to the secondembodiment in order of steps subsequent to FIG. 9C;

FIG. 11A to FIG. 11C are schematic sectional views illustrating mainsteps of a method of manufacturing a MOS transistor according to amodified example of the second embodiment in order;

FIG. 12A to FIG. 12C are schematic sectional views illustrating mainstops of the method of manufacturing the MOS transistor according to themodified example of the second embodiment in order subsequent to FIG.11C;

FIG. 13 is a connection diagram illustrating a schematic structure of apower supply device according to a third embodiment; and

FIG. 14 is a connection diagram illustrating a schematic structure of ahigh-frequency amplifier according to a fourth embodiment.

DESCRIPTION OF EMBODIMENTS First Embodiment

In this embodiment, an AlGaN/GaN HEMT of a nitride semiconductor that isa compound semiconductor is disclosed as a semiconductor device.

FIG. 1A to FIG. 4B are schematic sectional views illustrating a methodof manufacturing the AlGaN/GaN HEMT according to a first embodiment inorder of steps.

First, as illustrated in FIG. 1A, a compound semiconductor stackedstructure 2 as a stacked body of a plurality of compound semiconductorlayers is formed on, for example, a semi-insulating SiC substrate 1 as agrowth substrate. As the growth substrate, a Si substrate, a sapphiresubstrate, a GaAs substrate, a GaN substrate, or the like may be usedinstead of the SiC substrate. The conductivity of the substrate may beeither semi-insulating or conductive.

The compound semiconductor stacked structure 2 includes a buffer layer 2a, an electron transit layer 2 b, a spacer layer 2 c, an electron supplylayer 2 d, and a cap layer 2 e.

In the completed AlGaN/GaN HEMT, two-dimensional electron gas (2DEG) isgenerated, during operation thereof, in the vicinity of an interface, ofthe electron transit layer 2 b, with the electron supply layer 2 d (tobe exact, in the vicinity of an interface, of the electron transit layer2 b, with the spacer layer 2 c). The 2DEG is generated on the basis of alattice constant difference between the compound semiconductor (here,GaN) of the electron transit layer 2 b and the compound semiconductor(here, AlGaN) of the electron supply layer 2 d.

In detail, on the SiC substrate 1, the following compound semiconductorsare grown by, for example, an MOVPE (Metal Organic Vapor Phase Epitaxy)method. An MBE (Molecular Beam Epitaxy) method or the like may be usedinstead of the MOVPE method.

On the SiC substrate 1, AlN is grown to a thickness of about 200 nm, i(intentionally undoped)-GaN is grown to a thickness of about 1 μm,i-AlGaN is grown to a thickness of about 5 nm, n-AlGaN is grown to athickness of about 30 nm, and n-GaN is grown to a thickness of about 10nm in order. Thus, the buffer layer 2 a, the electron transit layer 2 b,the spacer layer 2 c, the electron supply layer 2 d, and the cap layer 2e are formed. As the buffer layer 2 a, AlGaN may be used instead of AlN,or GaN may be grown at a low temperature.

As a growth condition of AlN, mixed gas of trimethylaluminum (TMAl) gasand ammonia (NH₃) gas is used as a source gas. As a growth condition ofGaN, mixed gas of trimethylgallium (TMGa) gas and NH₃ gas is used as asource gas. As a growth condition of AlGaN, mixed gas of TMAl gas, TMGagas, and NH₃ gas is used as a source gas. According to the compoundsemiconductor layers to be grown, whether or not to supply the TAM1 gasbeing an Al source and the TMGa gas being a Ga source and flow ratesthereof are appropriately set. The flow rate of the ammonia gas being acommon source is set to about 100 ccm to about 10 LM. Further, growthpressure is set to about 50 Torr to about 300 Torr, and growthtemperature is set to about 1000° C. to about 1200° C.

For growing AlGaN, GaN as n-type, that is, for forming the electronsupply layer 2 d and the cap layer 2 e, for example, SiH₄ gas containingSi as n-type impurity, for example, is added to the source gas at apredetermined flow rate, thereby doping GaN and AlGaN with Si. A dopingconcentration of Si is set to about 1×10¹⁸/cm³ to about 1×10²⁰/cm³, forexample, about 5×10¹⁸/cm³.

Subsequently, element isolation regions 3 are formed as illustrated inFIG. 1B.

In detail, argon (Ar), for instance, is ion-implanted to portions to beinactive regions in the compound semiconductor stacked structure 2. Theelement isolation regions 3 are thereby formed in the compoundsemiconductor stacked structure 2 and surface layer portions of the SiCsubstrate 1. The element isolation regions 3 demarcate an element region(transistor region) of the AlGaN/GaN HEMT on the compound semiconductorstacked structure 2.

Incidentally, the element isolation may be performed using, instead ofthe above implantation method, for example, an STI (Shallow TrenchIsolation) method. In this event, for example, chlorine-based etchinggas is used for dry etching of the compound semiconductor stackedstructure 2.

Subsequently, as illustrated in FIG. 1C, a source electrode 4 and adrain electrode 5 are formed.

In detail, first, formation planned portions for the source electrodeand the drain electrode in the cap layer 2 e of the compoundsemiconductor stacked structure 2 are removed by lithography and dryetching. Thus, electrode recesses 2A, 2B are formed in the cap layer 2 eof the compound semiconductor stacked structure 2.

Then, a resist mask for forming the source electrode and the drainelectrode is formed. A resist is applied on the compound semiconductorstacked structure 2 and processed by the lithography. Thus, openingswhich expose the electrode recesses 2A, 2B are formed. Thus, a resistmask having the openings is formed.

Using this resist mask, Ti/Al (a lower layer is Ti and an upper layer isAl) for example is deposited as an electrode material by a vapordeposition method for example, on the resist mask including the insideof the openings which expose the formation planned portions for thesource electrode and the drain electrode. The thickness of Ti is about20 nm, and the thickness of Al is about 200 nm. By a lift-off method,the resist mask and Ti/Al deposited thereon are removed. Thereafter, theSiC substrate 1 is heat-treated at a temperature of about 400° C. toabout 1000° C., for example, about 600° C., in a nitrogen atmosphere forexample, thereby bringing the remaining Ti/Al into ohmic contact withthe electron supply layer 2 d. As long as the ohmic contact of Ti/Alwith the electron supply layer 2 d can be obtained, there may be caseswhere the heat treatment is unnecessary. The source electrode 4 and thedrain electrode 5 are thereby formed which fill the electrode recesses2A, 2B and are brought into ohmic contact with the electron supply layer2 d.

Subsequently, as illustrated in FIG. 2A, a protective film 6 for thesource electrode 4 and the drain electrode 5 is formed.

In detail, an insulating film, for example, a silicon nitride film isdeposited on the compound semiconductor stacked structure 2 to athickness of about 40 nm, for example, by a PECVD method so as to coverthe source electrode 4 and the drain electrode 5. The deposited siliconnitride film is processed by the lithography and dry etching so that thesilicon nitride film remains in the element region. The protective film6 is thereby formed.

Subsequently, as illustrated in FIG. 2B, a gate electrode 7 is formed.

In detail, first, a formation planned portion for the gate electrode inthe protective film 6 is removed by the lithography and dry etching. Anelectrode recess 6 a is thereby formed in the protective film 6.

Then, a resist mask for forming the gate electrode is formed. A resistis applied on the entire surface. Here, for example, an eaves structuretwo-layer resist is used, which is suitable for the vapor depositionmethod and the lift-off method. The applied resist is processed by thelithography. Thus, a resist mask having an opening which exposes theelectrode recess 6 a that is the formation planned portion for the gateelectrode is formed.

Then, Ni/Au (a lower layer is Ni and an upper layer is Au) for exampleis deposited as an electrode material using the resist mask by the vapordeposition method for example, on the resist mask including the insideof the opening. The thickness of Ni is about 30 nm, and the thickness ofAu is about 400 nm. By the lift-off method, the resist mask and Ni/Audeposited thereon are removed. The gate electrode 7 is thereby formed onthe protective film 6 while filling the electrode recess 6 a. The gateelectrode 7 is preferably formed at a position biased closer to thesource electrode 4 than to the drain electrode 5 as illustrated in FIG.2B.

Note that as the gate electrode 7, a gate electrode may be formed whichhas a lower portion being narrow (fine gate) and projecting upward fromthe protective film 6 and has an upper portion being wide (over gate).

Subsequently, as illustrated in FIG. 2C, an organic film 8 is formed.

In detail, a filled material is formed entirely on the surface of thecompound semiconductor stacked structure 2 so as to cover the sourceelectrode 4, the drain electrode 5, and the gate electrode 7. As thefilled material, a photolytic material, which is not particularlylimited, for example, an organic material may be used as long as it hasa C_(x)H_(y) skeletal structure that is decomposed by ultraviolet rayswith a wavelength of about 250 nm or more and 400 nm or less. Theorganic material is applied, for example, by the spin coating method.Note that polypropylene, polycarbonate or the like may also be used asthe filled material. The organic film 8 which embeds the gate electrode7 is thereby formed on the compound semiconductor stacked structure 2.

Subsequently, as illustrated in FIG. 3A, the organic film 8 isprocessed.

In detail, the organic film 8 is processed by the lithography and dryetching so that the organic film 8 remains at a predetermined portion.In this embodiment, the organic film 8 is left at a formation plannedportion for a later-described cavity, namely, for example, at a portioncovering the top of the protective film 6 so as to include the gateelectrode 7, the source electrode 4, and the drain electrode 5.

Subsequently, as illustrated in FIG. 3B, an interlayer insulating film 9is formed.

In detail, a porous insulating material that has a property oftransmitting ultraviolet rays and is a low dielectric constant materialis formed entirely on the surface of the compound semiconductor stackedstructure 2 so as to cover the organic film 8. As the porous insulatingmaterial, for example, porous silica is used. Other than porous silica,organosiloxane or siloxane hydroxide containing Si as a component orboth of them can also be used. Further, as the porous insulatingmaterial, organic polymer containing Si as a component may also be used.The interlayer insulating film 9 covering the organic film 8 is therebyformed above the compound semiconductor stacked structure 2.

Subsequently, as illustrated in FIG. 3C, contact holes 10 a, 10 b areformed in the protective film 6, the organic film 8, and the interlayerinsulating film 9.

In detail, the protective film 6, the organic film 8, and the interlayerinsulating film 9 are processed by the lithography and dry etching.Thus, contact holes which expose a part of the surface of the sourceelectrode 4, a part of the surface of the drain electrode 5, and a partof the surface of the gate electrode 7 respectively are formed in theprotective film 6, the organic film 8, and the interlayer insulatingfilm 9. In FIG. 3C, only the contact holes 10 a, 10 b which expose thepart of the surface of the source electrode 4 and the part of thesurface of the drain electrode 5 are illustrated.

Subsequently, as illustrated in FIG. 4A, wirings 12 a, 12 b are formed.

In detail, for example, TiW/Au is first deposited as a conductive film,here, a two-layer metal film on the entire surface of the interlayerinsulating film 9 by a sputtering method so as to fill the contact holes10 a, 10 b. The metal film is formed such that TiW is formed as a lowerlayer on the interlayer insulating film 9 so as to cover the inner wallsurfaces of the contact holes 10 a, 10 b and Au is formed as an upperlayer on the interlayer insulating film 9 so as to fill the contactholes 10 a, 10 b via TiW. Note that the metal film is formed tosimilarly fill the contact hole which exposes the part of the surface ofthe gate electrode 7.

Subsequently, a resist is applied onto the metal film and processed bythe lithography to form into a resist mask having openings correspondingto desired wirings on the metal film. The openings of the resist maskare filled with Au, for example, by an Au plating method, and the resistmask is removed by ashing or wet treatment.

Then, an excessive metal film on the interlayer insulating film 9 isremoved by the lithography and dry etching. The wirings 12 a, 12 b arethereby formed which extend on the interlayer insulating film 9 and areelectrically connected to the source electrode 4 and the drain electrode5 via connection parts 11 a, 11 b made by filling the contact holes 10a, 10 b with TiW/Au. Note that a wiring which is electrically connectedto the gate electrode 7 via a connection part made by filling thecontact hole with TiW/Au is also formed similarly to the wirings 12 a,12 b.

Subsequently, as illustrated in FIG. 4B, the organic film 8 is removedto form a cavity 13 in the interlayer insulating film 9.

In detail, ultraviolet rays with a wavelength of about 250 nm or moreand about 400 nm or less, for example, about 254 nm are applied to theinterlayer insulating film 9 in vacuum. Since the interlayer insulatingfilm 9 is the porous insulating material that has a property oftransmitting ultraviolet rays, the applied ultraviolet rays aretransmitted through the interlayer insulating film 9 and reach theorganic film 8. The organic film 8 is the material that has a propertyof being decomposed by ultraviolet rays, and is thus photolyzed by theapplication of the ultraviolet rays and removed through pores in theinterlayer insulating film 9. Thus, the organic film 8 is removed andthe cavity 13 is formed between the interlayer insulating film 9 and theprotective film 6.

The cavity 13 is formed at a portion where the organic film 8 hasexisted. The organic film 8 has been formed at the portion covering thetop of the protective film 6 so as to include the gate electrode 7, thesource electrode 4, and the drain electrode 5. Therefore, the cavity 13is formed between the interlayer insulating film 9 and the surface ofthe gate electrode 7, the surface of the source electrode 4, the surfaceof the drain electrode 5 via the protective film 6, and parts of thesurfaces of the connection parts 11 a, 11 b (and also a part of thesurface of the connection part for the gate electrode 7).

Thereafter, through post-steps such as electrical connection of thewirings 12 a, 12 b (and also the wiring for the gate electrode 7) and soon, the AlGaN/GaN HEMT is formed.

Hereinafter, the operation and effect achieved by the AlGaN/GaN HEMTmanufactured as described above will be described on the basis ofcomparison with its comparative examples.

FIG. 5 is a characteristic chart representing a relation between themaximum operating frequency (GHz) and the gate length (m) regarding theAlGaN/GaN HEMT according to this embodiment and its comparativeexamples.

In FIG. 5, Comparative Example 1 is an AlGaN/GaN HEMT with aconfiguration having no cavity around a gate electrode (a configurationin which the gate electrode is embedded in an interlayer insulatingfilm). Comparative Example 2 is an AlGaN/GaN HEMT with a configurationhaving an interlayer insulating film remaining on a source electrode anda drain electrode while having a cavity around a gate electrode. TheAlGaN/GaN HEMT of Comparative Example 2 is, for example, the oneaccording to Patent Document 1 to 4.

In the AlGaN/GaN HEMT of Comparative Example 2, a cavity is formed in aninterlayer insulating film made of BDB resin (benzocyclobutene) resincovering the periphery of the gate electrode, and the interlayerinsulating film remains on the source electrode and the drain electrode.In contrast, in the AlGaN/GaN HEMT in this embodiment, the interlayerinsulating film having a cavity in which the interlayer insulating filmdoes not remain on the source electrode and the drain electrode (acavity including the gate electrode, the source electrode, and the drainelectrode) is formed. The interlayer insulating film in this embodimentis made of a porous insulating material with a dielectric constant lowerthan that of the BDB resin.

As illustrated in FIG. 5, it is found that the maximum operatingfrequency larger than those of Comparative Example 1 and ComparativeExample 2 can be achieved over a predetermined gate length range in thisembodiment. Specifically, the maximum operating frequency is about 81GHz in Comparative Example 1 and the maximum operating frequency isabout 93 GHz in Comparative Example 2 when the gate length of the gateelectrode is 0.1 μm, whereas a large maximum operating frequency ofabout 97 GHz is realized in this embodiment.

As described above, according to this embodiment, a highly reliable andhigh-withstand-voltage AlGaN/GaN HEMT excellent in high-frequencycharacteristics, in which the parasitic capacitance due to theinterlayer insulating film around the gate electrode can be reduced asmuch as possible to sufficiently improve the maximum operating frequencyis realized.

Modified Example

Hereinafter, a modified example of the AlGaN/GaN HEMT according to thefirst embodiment will be described. In this example, an AlGaN/GaN HEMTis disclosed as in the first embodiment but is different from the firstembodiment in that the form of forming the cavity in the interlayerinsulating film is different.

FIG. 6A to FIG. 7C are schematic sectional views illustrating main stepsof a method of manufacturing the AlGaN/GaN HEMT according to themodified example of the first embodiment in order. Note that the sameconstituent members and the like as those in the first embodiment willbe denoted by the same reference signs and a detailed descriptionthereof will be omitted.

In this example, the steps in FIG. 1A to FIG. 2B are first performed asin the first embodiment. At this time, a gate electrode 7 is formed on acompound semiconductor stacked structure 2.

Subsequently, as illustrated in FIG. 6A, an organic film 14 is formed.

In detail, a filled material is formed entirely on the surface of thecompound semiconductor stacked structure 2 so as to cover a sourceelectrode 4, a drain electrode 5, and the gate electrode 7. As thefilled material, a material dissolving in superheated steam orsupercritical water, here, polyethylene that is an organic material isused. Polyethylene is applied, for example, by a spin coating method. Asthe filled material, polypropylene, polycarbonate or the like may alsobe used in place of polyethylene. The organic film 14 embedding the gateelectrode 7 is thereby formed on the compound semiconductor stackedstructure 2.

Subsequently, as illustrated in FIG. 68, the organic film 14 isprocessed.

In detail, the organic film 14 is processed by the lithography and dryetching so that the organic film 14 remains at a predetermined portion.In this embodiment, the organic film 14 is left at a formation plannedportion for a later-described cavity, namely, for example, a portioncovering the top of the protective film 6 so as to include the gateelectrode 7, the source electrode 4, and the drain electrode 5.

Subsequently, as illustrated in FIG. 6C, an interlayer insulating film 9is formed.

In detail, a porous insulating material that has a property oftransmitting superheated steam or supercritical water and is a lowdielectric constant material is formed entirely on the surface of thecompound semiconductor stacked structure 2 so as to cover the organicfilm 14. As the porous insulating material, for example, porous silicais used. Other than porous silica, organosiloxane or siloxane hydroxidecontaining Si as a component or both of them can also be used. Further,as the porous insulating material, organic polymer containing Si as acomponent may also be used. The interlayer insulating film 9 coveringthe organic film 14 is thereby formed above the compound semiconductorstacked structure 2.

Water becomes supercritical water when it increases in temperature andpressure over the critical point (saturated steam). On the other hand,in a region of the critical pressure or less, water becomes water in gasphase, namely, heated steam or subcritical water.

Subsequently, as illustrated in FIG. 7A, contact holes 10 a, 10 b areformed in the protective film 6, the organic film 14, and the interlayerinsulating film 9.

In detail, the protective film 6, the organic film 14, and theinterlayer insulating film 9 are processed by the lithography and dryetching. Thus, contact holes which expose a part of the surface of thesource electrode 4, a part of the surface of the drain electrode 5, anda part of the surface of the gate electrode 7 respectively are formed inthe protective film 6, the organic film 14, and the interlayerinsulating film 9. In FIG. 7A, only the contact holes 10 a, 10 b whichexpose the part of the surface of the source electrode 4 and the part ofthe surface of the drain electrode 5 are illustrated.

Subsequently, as illustrated in FIG. 7B, wirings 12 a, 12 b are formed.

In detail, for example, TiW/Au is first deposited as a conductive film,here, a two-layer metal film on the entire surface of the interlayerinsulating film 9 by the sputtering method so as to fill the contactholes 10 a, 10 b. The metal film is formed such that TiW is formed as alower layer on the interlayer insulating film 9 so as to cover the innerwall surfaces of the contact holes 10 a, 10 b and Au is formed as anupper layer on the interlayer insulating film 9 so as to fill thecontact holes 10 a, 10 b via TiW. Note that the metal film is formed tosimilarly fill the contact hole which exposes the part of the surface ofthe gate electrode 7.

Subsequently, a resist is applied onto the metal film and processed bythe lithography to form into a resist mask having openings correspondingto desired wirings on the metal film. The openings of the resist maskare filled with Au, for example, by the Au plating method, and theresist mask is removed by the ashing or wet treatment.

Then, an excessive metal film on the interlayer insulating film 9 isremoved by the lithography and dry etching. The wirings 12 a, 12 b arethereby formed which extend on the interlayer insulating film 9 and areelectrically connected to the source electrode 4 and the drain electrode5 via connection parts 11 a, 11 b made by filling the contact holes 10a, 10 b with TiW/Au. Note that a wiring which is electrically connectedto the gate electrode 7 via a connection part made by filling thecontact hole with TiW/Au is also formed similarly to the wirings 12 a,12 b.

Subsequently, as illustrated in FIG. 7C, the organic film 14 is removedto form a cavity 15 in the interlayer insulating film 9.

In detail, superheated steam at about 200° C. to about 300° C., forexample, about 250° C. is supplied to the interlayer insulating film 9.Since the interlayer insulating film 9 is the porous insulating materialthat has a property of transmitting superheated steam, the suppliedsuperheated steam is transmitted through the interlayer insulating film9 and reaches the organic film 14. The organic film 14 is the materialthat has a property of dissolving in superheated steam, and is thusdissolved by the supply of the superheated steam and is removed throughpores in the interlayer insulating film 9. Thus, the organic film 14 isremoved and the cavity 15 is formed between the interlayer insulatingfilm 9 and the protective film 6.

Instead of supplying the superheated steam, supercritical water at about200° C. to about 300° C., for example, about 250° C. may be supplied tothe interlayer insulating film 9. In this case, the organic film 14 isdissolved by the supply of the supercritical water and is removedthrough pores in the interlayer insulating film 9. Thus, the organicfilm 14 is removed and the cavity 15 is formed between the interlayerinsulating film 9 and the protective film 6.

The cavity 15 is formed at a portion where the organic film 14 hasexisted. The organic film 14 has been formed at the portion covering thetop of the protective film 6 so as to include the gate electrode 7, thesource electrode 4, and the drain electrode 5. Therefore, the cavity 15is formed between the interlayer insulating film 9 and the surface ofthe gate electrode 7, the surface of the source electrode 4, the surfaceof the drain electrode 5 via the protective film 6, and parts of thesurfaces of the connection parts 11 a, 11 b (and also a part of thesurface of the connection part for the gate electrode 7).

Thereafter, through post-steps such as electrical connection of thewirings 12 a, 12 b (and also the wiring for the gate electrode 7) and soon, the AlGaN/GaN HEMT is formed.

As described above, according to this example, a highly reliable andhigh-withstand-voltage AlGaN/GaN HEMT excellent in high-frequencycharacteristics, in which the parasitic capacitance due to theinterlayer insulating film around the gate electrode can be reduced asmuch as possible to sufficiently improve the maximum operating frequencyis realized.

Other Embodiments

In the first embodiment and its modified example, the AlGaN/GaN HEMTsare exemplified as the compound semiconductor device. As the compoundsemiconductor device, the present invention is applicable to thefollowing HEMTs, besides the AlGaN/GaN HEMT.

Other HEMT Example 1

In this example, an InAlN/GaN HEMT is disclosed as the compoundsemiconductor device.

InAlN and GaN are compound semiconductors whose lattice constants can bemade close to each other by the composition. In this case, in theabove-described first embodiment and its modified example, the electrontransit layer is made of i-GaN, the spacer layer is made of i-AlN, theelectron supply layer is made of n-InAlN, and the cap layer is made ofn-GaN. Further, in this case, almost no piezoelectric polarizationoccurs, and therefore, two-dimensional electron gas is generated mainlyby spontaneous polarization of InAlN.

According to this example, a highly reliable and high-withstand-voltageInAlN/GaN HEMT excellent in high-frequency characteristics, in which theparasitic capacitance due to the interlayer insulating film around thegate electrode can be reduced as much as possible to sufficientlyimprove the maximum operating frequency is realized similarly to theabove-described AlGaN/GaN HEMT.

Other HEMT Example 2

In this example, an InAlGaN/GaN HEMT is disclosed as the compoundsemiconductor device.

GaN and InAlGaN are compound semiconductors, with the latter capable ofhaving a smaller lattice constant than that of the former by thecomposition. In this case, in the above-described first embodiment andits modified example, the electron transit layer is made of i-GaN, thespacer layer is made of i-AlN, the electron supply layer is made ofn-InAlGaN, and the cap layer is made of n-GaN.

According to this example, a highly reliable and high-withstand-voltageInAlNGaN/GaN HEMT excellent in high-frequency characteristics, in whichthe parasitic capacitance due to the interlayer insulating film aroundthe gate electrode can be reduced as much as possible to sufficientlyimprove the maximum operating frequency is realized similarly to theabove-described AlGaN/GaN HEMT.

Second Embodiment

In this embodiment, a MOS transistor is disclosed as a semiconductordevice.

FIG. 8A to FIG. 10B are schematic sectional views illustrating a methodof manufacturing a MOS transistor according to a second embodiment inorder of steps.

First, as illustrated in FIG. 8A, a gate electrode 23 is formed on a Sisubstrate 21 via a gate insulating film 22.

In detail, element isolation regions 20 are formed, for example, by theSTI (Shallow Trench Isolation) method on the Si substrate 21. Theelement isolation regions 20 demarcate an element region on the Sisubstrate 21.

Next, for example, a silicon oxide film is deposited on the Si substrate21 by a CVD method or the like. The gate insulating film 22 is therebyformed.

Then, for example, a polycrystalline silicon is deposited on the gateinsulating film by the CVD method or the like, and the gate insulatingfilm 22 and the polycrystalline silicon are processed into an electrodeshape by the lithography and dry etching. The gate electrode 23 isthereby formed on the Si substrate 21 via the gate insulating film 22.

Subsequently, as illustrated in FIG. 8B, a source region 24 and a drainregion 25 are formed.

In detail, for example, a p-type impurity (boron or the like) or ann-type impurity (phosphorus, arsenic or the like) is ion-implanted intothe element region of the Si substrate 21 on both sides of the gateelectrode 23 using the gate electrode 23 as a mask, and thermallytreated. The source region 24 and the drain region 25 are thereby formedin the Si substrate 21 on both sides of the gate electrode 23.

Subsequently, as illustrated in FIG. 8C, an organic film 26 is formed.

In detail, a filled material is formed entirely on the surface of the Sisubstrate 21 so as to cover the gate electrode 23, the source region 24,and the drain region 25. As the filled material, a photolytic material,which is not particularly limited, for example, an organic material maybe used as long as it has a C_(x)H_(y) skeletal structure that isdecomposed by ultraviolet rays with a wavelength of about 250 nm or moreand 400 nm or less. The organic material is applied, for example, by thespin coating method. Note that polypropylene, polycarbonate or the likemay also be used as the filled material. The organic film 26 whichembeds the gate electrode 23 is thereby formed on the Si substrate 21.

Subsequently, as illustrated in FIG. 9A, the organic film 26 isprocessed.

In detail, the organic film 26 is processed by the lithography and dryetching so that the organic film 26 remains at a predetermined portion.In this embodiment, the organic film 26 is left at a formation plannedportion for a later-described cavity, namely, so as to include the gateelectrode 23, the source region 24, and the drain region 25.

Subsequently, as illustrated in FIG. 9B, an interlayer insulating film27 is formed.

In detail, a porous insulating material that has a property oftransmitting ultraviolet rays and is a low dielectric constant materialis formed entirely on the surface of the Si substrate 21 so as to coverthe organic film 26. As the porous insulating material, for example,porous silica is used. Other than porous silica, organosiloxane orsiloxane hydroxide containing Si as a component or both of them can alsobe used. Further, as the porous insulating material, organic polymercontaining Si as a component may also be used. The interlayer insulatingfilm 27 covering the organic film 26 is thereby formed above the Sisubstrate 21.

Subsequently, as illustrated in FIG. 9C, contact holes 28 a, 28 b areformed in the organic film 26 and the interlayer insulating film 27.

In detail, the organic film 26 and the interlayer insulating film 27 areprocessed by the lithography and dry etching. Thus, contact holes whichexpose a part of the surface of the source region 24, a part of thesurface of the drain region 25, and a part of the surface of the gateelectrode 23 respectively are formed in the organic film 26 and theinterlayer insulating film 27. In FIG. 9C, only the contact holes 28 a,28 b which expose the part of the surface of the source region 24 andthe part of the surface of the drain region 25 are illustrated.

Subsequently, as illustrated in FIG. 10A, wirings 30 a, 30 b are formed.

In detail, for example, TiW/Au is first deposited as a conductive film,here, a two-layer metal film on the entire surface of the interlayerinsulating film 27 by the sputtering method so as to fill the contactholes 28 a, 28 b. The metal film is formed such that TIW is formed as alower layer on the interlayer insulating film 27 so as to cover theinner wall surfaces of the contact holes 28 a, 28 b and Au is formed asan upper layer on the interlayer insulating film 27 so as to fill thecontact holes 28 a, 28 b via TiW. Note that the metal film is formed tosimilarly fill the contact hole which exposes the part of the surface ofthe gate electrode 23.

Subsequently, a resist is applied onto the metal film and processed bythe lithography to form into a resist mask having openings correspondingto desired wirings on the metal film. The openings of the resist maskare filled with Au, for example, by the Au plating method, and theresist mask is removed by the ashing or wet treatment.

Then, an excessive metal film on the interlayer insulating film 27 isremoved by the lithography and dry etching. The wirings 30 a, 30 b arethereby formed which extend on the interlayer insulating film 27 and areelectrically connected to the source region 24 and the drain region 25via connection parts 29 a, 29 b made by filling the contact holes 28 a,28 b with TiW/Au. Note that a wiring which is electrically connected tothe gate electrode 23 via a connection part made by filling the contacthole with TiW/Au is also formed similarly to the wirings 30 a, 30 b.

Subsequently, as illustrated in FIG. 10B, the organic film 26 is removedto form a cavity 31 in the interlayer insulating film 27.

In detail, ultraviolet rays with a wavelength of about 250 nm or moreand about 400 nm or less, for example, about 254 nm are applied to theinterlayer insulating film 27 in vacuum. Since the interlayer insulatingfilm 27 is the porous insulating material that has a property oftransmitting ultraviolet rays, the applied ultraviolet rays aretransmitted through the interlayer insulating film 27 and reach theorganic film 26. The organic film 26 is the material that has a propertyof being decomposed by ultraviolet rays, and is thus photolyzed by theapplication of the ultraviolet rays and removed through pores in theinterlayer insulating film 27. Thus, the organic film 26 is removed andthe cavity 31 is formed between the interlayer insulating film 27 andthe gate electrode 23, the source region 24 and the drain region 25.

The cavity 31 is formed at a portion where the interlayer insulatingfilm 27 and the organic film 26 have existed. The organic film 26 hasbeen formed at a portion including the gate electrode 23, the sourceregion 24 and the drain region 25. Therefore, the cavity 31 is formedbetween the interlayer insulating film 27 and the surface of the gateelectrode 23, the surface of the source region 24, the surface of thedrain region 25, and parts of the surfaces of the connection parts 29 a,29 b (and also a part of the surface of the connection part for the gateelectrode 23).

Thereafter, through post-steps such as electrical connection of thewirings 30 a, 30 b (and also the wiring for the gate electrode 23) andso on, the MOS transistor is formed.

As described above, according to this embodiment, a highly reliable MOStransistor excellent in preventing signal propagation delay, in whichthe parasitic capacitance due to the interlayer insulating film aroundthe gate electrode can be reduced as much as possible to sufficientlyimprove the maximum operating frequency is realized.

Modified Example

Hereinafter, a modified example of the MOS transistor according to thesecond embodiment will be described. In this example, a MOS transistoris disclosed as in the second embodiment but is different from thesecond embodiment in that the form of forming the cavity in theinterlayer insulating film is different.

FIG. 11A to FIG. 12C are schematic sectional views illustrating mainsteps of a method of manufacturing a MOS transistor a method ofmanufacturing the MOS transistor according to the modified example ofthe second embodiment in order. Note that the same constituent membersand the like as those in the second embodiment will be denoted by thesame reference signs and a detailed description thereof will be omitted.

In this example, the steps in FIG. 8A to FIG. 8B are first performed asin the second embodiment. At this time, a source region 24 and a drainregion 25 are formed in a Si substrate 21.

Subsequently, as illustrated in FIG. 11A, an organic film 32 is formed.

In detail, a filled material is formed entirely on the surface of the Sisubstrate 21 so as to cover a gate electrode 23, the source region 24,and the drain region 25. As the filled material, a material dissolvingin superheated steam or supercritical water, here, polyethylene that isan organic material is used. Polyethylene is applied, for example, bythe spin coating method. As the filled material, polypropylene,polycarbonate or the like may also be used in place of polyethylene. Theorganic film 32 embedding the gate electrode 23 is thereby formed on theSi substrate 21.

Subsequently, as illustrated in FIG. 11B, the organic film 32 isprocessed.

In detail, the organic film 32 is processed by the lithography and dryetching so that the organic film 32 remains at a predetermined portion.In this embodiment, the organic film 32 is left at a formation plannedportion for a later-described cavity, namely, so as to include the gateelectrode 23, the source region 24, and the drain region 25.

Subsequently, as illustrated in FIG. 11C, an interlayer insulating film27 is formed.

In detail, a porous insulating material that has a property oftransmitting superheated steam or supercritical water and is a lowdielectric constant material is formed entirely on the surface of the Sisubstrate 21 so as to cover the organic film 32. As the porousinsulating material, for example, porous silica is used. Other thanporous silica, organosiloxane or siloxane hydroxide containing Si as acomponent or both of them can also be used. Further, as the porousinsulating material, organic polymer containing Si as a component mayalso be used. The interlayer insulating film 27 covering the organicfilm 32 is thereby formed above the Si substrate 21.

Subsequently, as illustrated in FIG. 12A, contact holes 28 a, 28 b areformed in the organic film 32 and the interlayer insulating film 27.

In detail, the organic film 32 and the interlayer insulating film 27 areprocessed by the lithography and dry etching. Thus, contact holes whichexpose a part of the surface of the source region 24, a part of thesurface of the drain region 25, and a part of the surface of the gateelectrode 23 respectively are formed in the organic film 32 and theinterlayer insulating film 27. In FIG. 12A, only the contact holes 28 a,28 b which expose the part of the surface of the source region 24 andthe part of the surface of the drain region 25 are illustrated.

Subsequently, as illustrated in FIG. 12B, wirings 30 a, 30 b are formed.

In detail, for example, TiW/Au is first deposited as a conductive film,here, a two-layer metal film on the entire surface of the interlayerinsulating film 27 by the sputtering method so as to fill the contactholes 28 a, 28 b. The metal film is formed such that TiW is formed as alower layer on the interlayer insulating film 27 so as to cover theinner wall surfaces of the contact holes 28 a, 28 b and Au is formed asan upper layer on the interlayer insulating film 27 so as to fill thecontact holes 28 a, 28 b via TiW. Note that the metal film is formed tosimilarly fill the contact hole which exposes the part of the surface ofthe gate electrode 23.

Subsequently, a resist is applied onto the metal film and processed bythe lithography to form into a resist mask having openings correspondingto desired wirings on the metal film. The openings of the resist maskare filled with Au, for example, by the Au plating method, and theresist mask is removed by the ashing or wet treatment.

Then, an excessive metal film on the interlayer insulating film 27 isremoved by the lithography and dry etching. The wirings 30 a, 30 b arethereby formed which extend on the interlayer insulating film 27 and areelectrically connected to the source region 24 and the drain region 25via connection parts 29 a, 29 b made by filling the contact holes 28 a,28 b with TiW/Au. Note that a wiring which is electrically connected tothe gate electrode 23 via a connection part made by filling the contacthole with TiW/Au is also formed similarly to the wirings 30 a, 30 b.

Subsequently, as illustrated in FIG. 12C, the organic film 32 is removedto form a cavity 33 in the interlayer insulating film 27.

In detail, superheated steam at about 200° C. to about 300° C., forexample, about 250° C. is supplied to the interlayer insulating film 27.Since the interlayer insulating film 27 is the porous insulatingmaterial that has a property of transmitting superheated steam, thesupplied superheated steam is transmitted through the interlayerinsulating film 27 and reaches the organic film 32. The organic film 32is the material that has a property of dissolving in superheated steam,and is thus dissolved by the supply of the superheated steam and isremoved through pores in the interlayer insulating film 27. Thus, theorganic film 32 is removed and the cavity 33 is formed between theinterlayer insulating film 27 and the gate electrode 23, the sourceregion 24 and the drain region 25.

Instead of supplying the superheated steam, supercritical water at about200° C. to about 300° C., for example, about 250° C. may be supplied tothe interlayer insulating film 27. In this case, the organic film 32 isdissolved by the supply of the supercritical water and is removedthrough pores in the interlayer insulating film 27. Thus, the organicfilm 32 is removed and the cavity 33 is formed between the interlayerinsulating film 27 and the gate electrode 23, the source region 24 andthe drain region 25.

The cavity 33 is formed at a portion where the interlayer insulatingfilm 27 and the organic film 32 have existed. The organic film 32 hasbeen formed at a portion including the gate electrode 23, the sourceregion 24 and the drain region 25. Therefore, the cavity 33 is formedbetween the interlayer insulating film 27 and the surface of the gateelectrode 23, the surface of the source region 24, the surface of thedrain region 25, and parts of the surfaces of the connection parts 29 a,29 b (and also a part of the surface of the connection part for the gateelectrode 23).

Thereafter, through post-steps such as electrical connection of thewirings 30 a, 30 b (and also the wiring for the gate electrode 23) andso on, the MOS transistor is formed.

As described above, according to this embodiment, a highly reliable MOStransistor excellent in preventing signal propagation delay, in whichthe parasitic capacitance due to the interlayer insulating film aroundthe gate electrode can be reduced as much as possible to sufficientlyimprove the maximum operating frequency is realized.

Third Embodiment

In this embodiment, a power supply device to which the AlGaN/GaN HEMT ofthe first embodiment or its modified example is applied is disclosed.

FIG. 13 is a connection diagram illustrating a schematic structure ofthe power supply device according to the third embodiment.

The power supply device according to this embodiment includes ahigh-voltage primary-side circuit 41, a low-voltage secondary-sidecircuit 42, and a transformer 43 disposed between the primary-sidecircuit 41 and the secondary-side circuit 42.

The primary-side circuit 41 includes an AC power source 44, a so-calledbridge rectifying circuit 45, and a plurality of (four here) switchingelements 46 a, 46 b, 46 c, 46 d. Further, the bridge rectifying circuit45 has a switching element 46 e.

The secondary-side circuit 42 includes a plurality of (three here)switching elements 47 a, 47 b, 47 c.

In this embodiment, the switching elements 46 a, 46 b, 46 c, 46 d, 46 eof the primary-side circuit 41 are each the AlGaN/GaN HEMT according tothe first embodiment or its modified example. On the other hand, theswitching elements 47 a, 47 b, 47 c of the secondary-side circuit 42 areeach an ordinary MIS FET using silicon.

In this embodiment, a highly reliable and high-withstand-voltageAlGaN/GaN HEMT excellent in high-frequency characteristics, in which theparasitic capacitance due to the interlayer insulating film around thegate electrode can be reduced as much as possible to sufficientlyimprove the maximum operating frequency is applied to a high-voltagecircuit. Consequently, a highly reliable and large-power supply circuitis realized.

Fourth Embodiment

In this embodiment, a high-frequency amplifier to which the AlGaN/GaNHEMT according to the first embodiment or its modified example isapplied is disclosed.

FIG. 14 is a connection diagram illustrating a schematic structure ofthe high-frequency amplifier according to the fourth embodiment.

The high-frequency amplifier according to this embodiment includes adigital pre-distortion circuit 51, mixers 52 a, 52 b, and a poweramplifier 53.

The digital pre-distortion circuit 51 compensates nonlinear distortionof an input signal. The mixer 52 a mixes the input signal whosenonlinear distortion is compensated and an AC signal. The poweramplifier 53 amplifies the input signal mixed with the AC signal, andhas the AlGaN/GaN HEMT according to the first embodiment or its modifiedexample. In FIG. 14, by, for example, changing of the switches, anoutput-side signal can be mixed with the AC signal by the mixer 52 b,and the resultant can be sent out to the digital pre-distortion circuit51.

In this embodiment, a highly reliable and high-withstand-voltageAlGaN/GaN HEMT excellent in high-frequency characteristics, in which theparasitic capacitance due to the interlayer insulating film around thegate electrode can be reduced as much as possible to sufficientlyimprove the maximum operating frequency is applied to a high-frequencyamplifier. Consequently, a highly reliable and high-withstand-voltagehigh-frequency amplifier is realized.

According to the above embodiments, a highly reliable semiconductordevice in which the parasitic capacitance due to an interlayerinsulating film around an electrode can be reduced as much as possibleto sufficiently improve the maximum operating frequency is realized.

All examples and conditional language provided herein are intended forthe pedagogical purposes of aiding the reader in understanding theinvention and the concepts contributed by the inventor to further theart, and are not to be construed as limitations to such specificallyrecited examples and conditions, nor does the organization of suchexamples in the specification relate to a showing of the superiority andinferiority of the invention. Although one or more embodiments of thepresent invention have been described in detail, it should be understoodthat the various changes, substitutions, and alterations could be madehereto without departing from the spirit and scope of the invention.

1-4. (canceled)
 5. A method of manufacturing a semiconductor devicecomprising: forming a first electrode; forming a second electrode;covering the first electrode and the second electrode with a filledmaterial; forming an interlayer insulating film covering the filledmaterial; forming connection parts which penetrate the filled materialand the interlayer insulating film and are electrically connected to thefirst electrode and the second electrode; and removing the filledmaterial to form a cavity between the interlayer insulating film and asurface of the first electrode, a surface of the second electrode, andparts of surfaces of the connection parts.
 6. The method ofmanufacturing a semiconductor device according to claim 5, wherein theinterlayer insulating film is made of a porous insulating material, andwherein the filled material is removed through pores in the interlayerinsulating film to form the cavity.
 7. The method of manufacturing asemiconductor device according to claim 6, wherein the filled materialis a photolytic material, and wherein the filled material is removed byphotolysis.
 8. The method of manufacturing a semiconductor deviceaccording to claim 7, wherein the interlayer insulating film is made ofa material having a property of transmitting ultraviolet rays, andwherein ultraviolet rays are applied to the interlayer insulating filmto photolyze the filled material.
 9. The method of manufacturing asemiconductor device according to claim 8, wherein ultraviolet rays witha wavelength of 250 nm or more and 400 nm or less are applied to theinterlayer insulating film.
 10. The method of manufacturing asemiconductor device according to claim 6, wherein the filled materialis a material dissolving in superheated steam or supercritical water,and wherein the filled material is dissolved and removed by superheatedsteam or supercritical water.
 11. The method of manufacturing asemiconductor device according to claim 5, wherein the first electrodeand the second electrode are formed above a compound semiconductorlayer.
 12. A power supply circuit comprising a transformer, and ahigh-voltage circuit and a low-voltage circuit across the transformer,the high-voltage circuit comprising a transistor, the transistorcomprising: a first electrode; a second electrode; an interlayerinsulating film formed above the first electrode and the secondelectrode; and connection parts electrically connected to the firstelectrode and the second electrode respectively, wherein a cavity isformed between the interlayer insulating film and a surface of the firstelectrode, a surface of the second electrode, and parts of surfaces ofthe connection parts.
 13. A high-frequency amplifier that amplifies aninputted high-frequency voltage and outputs a resultant high-frequencyvoltage, the high-frequency amplifier comprising: a transistor, thetransistor comprising: a first electrode; a second electrode; aninterlayer insulating film formed above the first electrode and thesecond electrode; and connection parts electrically connected to thefirst electrode and the second electrode respectively, wherein a cavityis formed between the interlayer insulating film and a surface of thefirst electrode, a surface of the second electrode, and parts ofsurfaces of the connection parts.